Optical properties and crystallization of AgInTeSbGe phase-change optical disk media

AgInTeSbGe thin films were deposited by the dc sputtering method. Due to germanium doping in the AgInTeSb film, new Ag2Te and Ge2Sb2Te5 crystalline phases were formed. The crystallization temperature and the activation energy of the AgInTeSbGe thin film increased manifestly with the addition of Ge....

Full description

Saved in:
Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2003-12, Vol.77 (7), p.905-909
Main Authors: Liu, B., Gan, F.-X.
Format: Article
Language:English
Subjects:
Crystal structure
Crystallization
Doping
Materials science
Optical discs
Recording
Reflectivity
Thin films
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:AgInTeSbGe thin films were deposited by the dc sputtering method. Due to germanium doping in the AgInTeSb film, new Ag2Te and Ge2Sb2Te5 crystalline phases were formed. The crystallization temperature and the activation energy of the AgInTeSbGe thin film increased manifestly with the addition of Ge. The refractive index n and the extinction coefficient k of the AgInTeSbGe film in the amorphous and crystalline states were measured. The reflectivity contrast of the AgInTeSbGe phase-change optical disk was greater than %30 in almost the whole visible region. A minimum recording mark of about 220 nm in length was recorded using the AgInTeSbGe thin film as the recording medium. The reflectivity contrast of the minimum recording mark was about %25.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-003-2159-8