The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. Nitrogen bonding states

Nitridation of hydrogen-terminated silicon in a diluted N2:N2O atmosphere was studied by X-ray photoemission spectroscopy and high-resolution electron microscopy. Our analysis showed that the broad N(1s) peak of width 1.5 eV at 398--399 eV, usually reported in the literature, is preceded by the form...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2002-11, Vol.75 (5), p.585-590
Main Authors: Cerofolini, G F, Bongiorno, C, Camalleri, M, Condorelli, G G, Fragala, I L, Galati, C, Lorenti, S, Renna, L, Spinella, C, Viscuso, O
Format: Article
Language:English
Subjects:
Atmospheres
Bonding
Dilution
Electron microscopy
Materials science
Photoelectron spectroscopy
Silicon
X-rays
Online Access:Get full text
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Summary:Nitridation of hydrogen-terminated silicon in a diluted N2:N2O atmosphere was studied by X-ray photoemission spectroscopy and high-resolution electron microscopy. Our analysis showed that the broad N(1s) peak of width 1.5 eV at 398--399 eV, usually reported in the literature, is preceded by the formation of a narrow peak of width around 1.0 eV at 397.5 eV, attributed to the moiety Si3N in which silicon is only marginally oxidized, and two other peaks at 400.0 eV and 401.5 eV, attributed to the moieties Si2NOSi and SiNO, respectively.
ISSN:0947-8396
1432-0630
DOI:10.1007/s003390101033