The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. Nitrogen bonding states

Nitridation of hydrogen-terminated silicon in a diluted N2:N2O atmosphere was studied by X-ray photoemission spectroscopy and high-resolution electron microscopy. Our analysis showed that the broad N(1s) peak of width 1.5 eV at 398--399 eV, usually reported in the literature, is preceded by the form...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2002-11, Vol.75 (5), p.585-590
Main Authors: Cerofolini, G F, Bongiorno, C, Camalleri, M, Condorelli, G G, Fragala, I L, Galati, C, Lorenti, S, Renna, L, Spinella, C, Viscuso, O
Format: Article
Language:English
Subjects:
Atmospheres
Bonding
Dilution
Electron microscopy
Materials science
Photoelectron spectroscopy
Silicon
X-rays
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 590
container_issue 5
container_start_page 585
container_title Applied physics. A, Materials science & processing
container_volume 75
creator Cerofolini, G F
Bongiorno, C
Camalleri, M
Condorelli, G G
Fragala, I L
Galati, C
Lorenti, S
Renna, L
Spinella, C
Viscuso, O
description Nitridation of hydrogen-terminated silicon in a diluted N2:N2O atmosphere was studied by X-ray photoemission spectroscopy and high-resolution electron microscopy. Our analysis showed that the broad N(1s) peak of width 1.5 eV at 398--399 eV, usually reported in the literature, is preceded by the formation of a narrow peak of width around 1.0 eV at 397.5 eV, attributed to the moiety Si3N in which silicon is only marginally oxidized, and two other peaks at 400.0 eV and 401.5 eV, attributed to the moieties Si2NOSi and SiNO, respectively.
doi_str_mv 10.1007/s003390101033
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1283689693</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1283689693</sourcerecordid><originalsourceid>FETCH-LOGICAL-p103t-203c95a63b1899be210372956f758cc897ce3349259005a79b960dd5835425ec3</originalsourceid><addsrcrecordid>eNotj81PAjEQxRujiYgevfeIh8VuZ9ttvRniV0LggmfS7c5CzdLithj47y3ReYdJ3pv5TYaQ-5JNS8bqx8gYgGZlFsAFGZUV8IJJYJdkxHRVFwq0vCY3MX6xXBXnI_Kz2iJFM_QnGo4n79LgWpNc8DQms8FIQ0e3p3YIG_RFwmHnvEnY0km--ECj653Ns6bLEcXjPsTDgDQFuuBPC76c0kUmnndpE3zr_OaMTRhvyVVn-oh3_31MPl9fVrP3Yr58-5g9z4t9_iEVnIHVwkhoSqV1gzy7NddCdrVQ1ipdWwSoNBeaMWFq3WjJ2lYoEBUXaGFMJn_c_RC-DxjTeueixb43HsMhrkuuQCotNcAvxkleOg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1283689693</pqid></control><display><type>article</type><title>The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. Nitrogen bonding states</title><source>Springer Link</source><creator>Cerofolini, G F ; Bongiorno, C ; Camalleri, M ; Condorelli, G G ; Fragala, I L ; Galati, C ; Lorenti, S ; Renna, L ; Spinella, C ; Viscuso, O</creator><creatorcontrib>Cerofolini, G F ; Bongiorno, C ; Camalleri, M ; Condorelli, G G ; Fragala, I L ; Galati, C ; Lorenti, S ; Renna, L ; Spinella, C ; Viscuso, O</creatorcontrib><description>Nitridation of hydrogen-terminated silicon in a diluted N2:N2O atmosphere was studied by X-ray photoemission spectroscopy and high-resolution electron microscopy. Our analysis showed that the broad N(1s) peak of width 1.5 eV at 398--399 eV, usually reported in the literature, is preceded by the formation of a narrow peak of width around 1.0 eV at 397.5 eV, attributed to the moiety Si3N in which silicon is only marginally oxidized, and two other peaks at 400.0 eV and 401.5 eV, attributed to the moieties Si2NOSi and SiNO, respectively.</description><identifier>ISSN: 0947-8396</identifier><identifier>EISSN: 1432-0630</identifier><identifier>DOI: 10.1007/s003390101033</identifier><language>eng</language><subject>Atmospheres ; Bonding ; Dilution ; Electron microscopy ; Materials science ; Photoelectron spectroscopy ; Silicon ; X-rays</subject><ispartof>Applied physics. A, Materials science &amp; processing, 2002-11, Vol.75 (5), p.585-590</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Cerofolini, G F</creatorcontrib><creatorcontrib>Bongiorno, C</creatorcontrib><creatorcontrib>Camalleri, M</creatorcontrib><creatorcontrib>Condorelli, G G</creatorcontrib><creatorcontrib>Fragala, I L</creatorcontrib><creatorcontrib>Galati, C</creatorcontrib><creatorcontrib>Lorenti, S</creatorcontrib><creatorcontrib>Renna, L</creatorcontrib><creatorcontrib>Spinella, C</creatorcontrib><creatorcontrib>Viscuso, O</creatorcontrib><title>The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. Nitrogen bonding states</title><title>Applied physics. A, Materials science &amp; processing</title><description>Nitridation of hydrogen-terminated silicon in a diluted N2:N2O atmosphere was studied by X-ray photoemission spectroscopy and high-resolution electron microscopy. Our analysis showed that the broad N(1s) peak of width 1.5 eV at 398--399 eV, usually reported in the literature, is preceded by the formation of a narrow peak of width around 1.0 eV at 397.5 eV, attributed to the moiety Si3N in which silicon is only marginally oxidized, and two other peaks at 400.0 eV and 401.5 eV, attributed to the moieties Si2NOSi and SiNO, respectively.</description><subject>Atmospheres</subject><subject>Bonding</subject><subject>Dilution</subject><subject>Electron microscopy</subject><subject>Materials science</subject><subject>Photoelectron spectroscopy</subject><subject>Silicon</subject><subject>X-rays</subject><issn>0947-8396</issn><issn>1432-0630</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNotj81PAjEQxRujiYgevfeIh8VuZ9ttvRniV0LggmfS7c5CzdLithj47y3ReYdJ3pv5TYaQ-5JNS8bqx8gYgGZlFsAFGZUV8IJJYJdkxHRVFwq0vCY3MX6xXBXnI_Kz2iJFM_QnGo4n79LgWpNc8DQms8FIQ0e3p3YIG_RFwmHnvEnY0km--ECj653Ns6bLEcXjPsTDgDQFuuBPC76c0kUmnndpE3zr_OaMTRhvyVVn-oh3_31MPl9fVrP3Yr58-5g9z4t9_iEVnIHVwkhoSqV1gzy7NddCdrVQ1ipdWwSoNBeaMWFq3WjJ2lYoEBUXaGFMJn_c_RC-DxjTeueixb43HsMhrkuuQCotNcAvxkleOg</recordid><startdate>20021101</startdate><enddate>20021101</enddate><creator>Cerofolini, G F</creator><creator>Bongiorno, C</creator><creator>Camalleri, M</creator><creator>Condorelli, G G</creator><creator>Fragala, I L</creator><creator>Galati, C</creator><creator>Lorenti, S</creator><creator>Renna, L</creator><creator>Spinella, C</creator><creator>Viscuso, O</creator><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20021101</creationdate><title>The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. Nitrogen bonding states</title><author>Cerofolini, G F ; Bongiorno, C ; Camalleri, M ; Condorelli, G G ; Fragala, I L ; Galati, C ; Lorenti, S ; Renna, L ; Spinella, C ; Viscuso, O</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p103t-203c95a63b1899be210372956f758cc897ce3349259005a79b960dd5835425ec3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Atmospheres</topic><topic>Bonding</topic><topic>Dilution</topic><topic>Electron microscopy</topic><topic>Materials science</topic><topic>Photoelectron spectroscopy</topic><topic>Silicon</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cerofolini, G F</creatorcontrib><creatorcontrib>Bongiorno, C</creatorcontrib><creatorcontrib>Camalleri, M</creatorcontrib><creatorcontrib>Condorelli, G G</creatorcontrib><creatorcontrib>Fragala, I L</creatorcontrib><creatorcontrib>Galati, C</creatorcontrib><creatorcontrib>Lorenti, S</creatorcontrib><creatorcontrib>Renna, L</creatorcontrib><creatorcontrib>Spinella, C</creatorcontrib><creatorcontrib>Viscuso, O</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics. A, Materials science &amp; processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cerofolini, G F</au><au>Bongiorno, C</au><au>Camalleri, M</au><au>Condorelli, G G</au><au>Fragala, I L</au><au>Galati, C</au><au>Lorenti, S</au><au>Renna, L</au><au>Spinella, C</au><au>Viscuso, O</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. Nitrogen bonding states</atitle><jtitle>Applied physics. A, Materials science &amp; processing</jtitle><date>2002-11-01</date><risdate>2002</risdate><volume>75</volume><issue>5</issue><spage>585</spage><epage>590</epage><pages>585-590</pages><issn>0947-8396</issn><eissn>1432-0630</eissn><abstract>Nitridation of hydrogen-terminated silicon in a diluted N2:N2O atmosphere was studied by X-ray photoemission spectroscopy and high-resolution electron microscopy. Our analysis showed that the broad N(1s) peak of width 1.5 eV at 398--399 eV, usually reported in the literature, is preceded by the formation of a narrow peak of width around 1.0 eV at 397.5 eV, attributed to the moiety Si3N in which silicon is only marginally oxidized, and two other peaks at 400.0 eV and 401.5 eV, attributed to the moieties Si2NOSi and SiNO, respectively.</abstract><doi>10.1007/s003390101033</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0947-8396
ispartof Applied physics. A, Materials science & processing, 2002-11, Vol.75 (5), p.585-590
issn 0947-8396
1432-0630
language eng
recordid cdi_proquest_miscellaneous_1283689693
source Springer Link
subjects Atmospheres
Bonding
Dilution
Electron microscopy
Materials science
Photoelectron spectroscopy
Silicon
X-rays
title The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N2:N2O. Nitrogen bonding states
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T13%3A27%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20early%20oxynitridation%20stages%20of%20hydrogen-terminated%20(100)%20silicon%20after%20exposure%20to%20N2:N2O.%20Nitrogen%20bonding%20states&rft.jtitle=Applied%20physics.%20A,%20Materials%20science%20&%20processing&rft.au=Cerofolini,%20G%20F&rft.date=2002-11-01&rft.volume=75&rft.issue=5&rft.spage=585&rft.epage=590&rft.pages=585-590&rft.issn=0947-8396&rft.eissn=1432-0630&rft_id=info:doi/10.1007/s003390101033&rft_dat=%3Cproquest%3E1283689693%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p103t-203c95a63b1899be210372956f758cc897ce3349259005a79b960dd5835425ec3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1283689693&rft_id=info:pmid/&rfr_iscdi=true