Luminescence properties of thin films prepared by laser ablation of Nd-doped potassium gadolinium tungstate

Optically active thin films on Si substrates have been produced by laser ablation of a Nd-doped potassium gadolinium tungstate (Nd:KGW) single crystal. Films grown at low oxygen pressures (150 *ms) under certain conditions than those measured in the single-crystal material.

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2002, Vol.74 (1), p.109-113
Main Authors: ATANASOV, P. A, PEREA, A, JIMENEZ DE CASTRO, M, CHAOS, J. A, GONZALO, J, AFONSO, C. N, PERRIERE, J
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Insulators
Laser ablation
Luminescence
Neodymium
Optical activity
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Potassium gadolinium tungstate
Single crystals
Stoichiometry
Thin films
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Description
Summary:Optically active thin films on Si substrates have been produced by laser ablation of a Nd-doped potassium gadolinium tungstate (Nd:KGW) single crystal. Films grown at low oxygen pressures (150 *ms) under certain conditions than those measured in the single-crystal material.
ISSN:0947-8396
1432-0630
DOI:10.1007/s003390100975