Enhanced plasmonic resonant excitation in a grating gated field-effect transistor with supplemental gates

An alternative-grating gated AlGaN/GaN field-effect transistor (FET) is proposed by considering the slit regions to be covered by a highly doped semiconductor acting as supplemental gates. The plasmonic resonant absorption spectra are studied at THz frequencies using the FDTD method. The 2DEGs, unde...

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Bibliographic Details
Published in:Optics express 2013-01, Vol.21 (2), p.1606-1614
Main Authors: Guo, Nan, Hu, Wei-Da, Chen, Xiao-Shuang, Wang, Lin, Lu, Wei
Format: Article
Language:English
Subjects:
Equipment Design
Equipment Failure Analysis
Radiation Dosage
Radiometry - instrumentation
Signal Processing, Computer-Assisted - instrumentation
Surface Plasmon Resonance - instrumentation
Terahertz Radiation
Transistors, Electronic
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Summary:An alternative-grating gated AlGaN/GaN field-effect transistor (FET) is proposed by considering the slit regions to be covered by a highly doped semiconductor acting as supplemental gates. The plasmonic resonant absorption spectra are studied at THz frequencies using the FDTD method. The 2DEGs, under supplemental gates, modulated by a positive voltage, can make the excitation of the higher order plasmon modes under metallic fingers more efficient in comparison to ungated regions in common slit-grating gate transistors. Moreover, the supplemental gates can confine the electric field of dipole oscillation between metallic gate fingers under THz radiation. The competition of the near-field enhancement and screening effect of the supplemental gate fingers results in the intensity of the higher order plasmon resonances being maximized at increased doping concentration. Our results demonstrate the possibility of significant improvement in the excitation of plasmon resonances in FETs for THz detection.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.21.001606