113Gb/s (10 x 11.3Gb/s) ultra-low power EAM driver array

This paper presents an ultra-low power SiGe BiCMOS IC for driving a 10 channel electro-absorption modulator (EAM) array at 113Gb/s for wavelength division multiplexing passive optical network (WDM-PON) applications. With an output swing of 2.5V(pp), the EAM driver array consumes only 2.2W or 220mW p...

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Bibliographic Details
Published in:Optics express 2013-01, Vol.21 (1), p.256-262
Main Authors: Vaernewyck, Renato, Bauwelinck, Johan, Yin, Xin, Pierco, Ramses, Verbrugghe, Jochen, Torfs, Guy, Li, Zhisheng, Qiu, Xing-Zhi, Vandewege, Jan, Cronin, Richard, Borghesani, Anna, Moodie, David
Format: Article
Language:English
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Summary:This paper presents an ultra-low power SiGe BiCMOS IC for driving a 10 channel electro-absorption modulator (EAM) array at 113Gb/s for wavelength division multiplexing passive optical network (WDM-PON) applications. With an output swing of 2.5V(pp), the EAM driver array consumes only 2.2W or 220mW per channel, 50% below the state of the art. Both the output swing and bias are configurable between 1.5 and 3.0V(pp) and 0.75-2.15V respectively.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.21.000256