Transparent High-Performance Thin Film Transistors from Solution-Processed SnO2/ZrO2 Gel-like Precursors

This work employs novel SnO2 gel‐like precursors in conjunction with sol–gel deposited ZrO2 gate dielectrics to realize high‐performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm2 V−1 s−1 in saturation at operation vol...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2013-02, Vol.25 (7), p.1042-1047
Main Authors: Jang, Jaewon, Kitsomboonloha, Rungrot, Swisher, Sarah L., Park, Eung Seok, Kang, Hongki, Subramanian, Vivek
Format: Article
Language:English
Subjects:
Electricity
Gels
metal oxides
Particle Size
SnO2
sol-gel process
solution process
thin film transistors
Tin Compounds - chemistry
Transistors, Electronic
transparent
Zirconium - chemistry
ZrO2
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Summary:This work employs novel SnO2 gel‐like precursors in conjunction with sol–gel deposited ZrO2 gate dielectrics to realize high‐performance transparent transistors. Representative devices show excellent performance and transparency, and deliver mobility of 103 cm2 V−1 s−1 in saturation at operation voltages as low as 2 V, a sub‐threshold swing of only 0.3 V/decade, and Ion/Ioff of 104∼105.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201202997