Investigation properties of Au–porous a-Si0.70C0.30 as humidity sensor

In this letter, we report the study of a humidity sensor based on porous amorphous silicon carbide (PASiC) as a function of exposure time and relative humidity (RH). Resistive humidity sensors Au–PASiC/Si(p) were fabricated through evaporating coplanar interdigital gold electrodes. The PASiC was for...

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Bibliographic Details
Published in:Sensors and actuators. B, Chemical Chemical, 2013-01, Vol.176, p.1183-1190
Main Authors: Boukezzata, Assia, Keffous, Aissa, Nezzal, Ghania, Gabouze, Noureddine, Kechouane, Mohamed, Zaafane, Kahina, Hammouda, Amirouche, Simon, Patrick, Menari, Hamid
Format: Article
Language:English
Subjects:
Au electrodes
Current density
Electric potential
Electrochemical etching
electrodes
ethylene glycol
evaporation
exposure duration
Fourier transform infrared spectroscopy
Gold
Humidity
Porous SiC
Raman spectroscopy
Relative humidity
RH sensors
Sensors
silicon
Silicon carbide
Voltage
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Summary:In this letter, we report the study of a humidity sensor based on porous amorphous silicon carbide (PASiC) as a function of exposure time and relative humidity (RH). Resistive humidity sensors Au–PASiC/Si(p) were fabricated through evaporating coplanar interdigital gold electrodes. The PASiC was formed by anodization of a-Si0.70C0.30 in HF/ethylene glycol (ETG) solution at current density of 50mA/cm2 for 30s. The structural properties of a-Si0.70C0.30 thin films deposited by DC magnetron co-sputtering using single silicon crystal, 6H-SiC targets and the PASiC films were investigated by FT-IR and Raman spectroscopy. Hygroscopicity was studied by measuring the resistance of the PASiC under various RH. The results show that the measured resistance highly depends on the applied bias voltage. Moreover, the response signal against RH is found linear for an applied voltage of 2V. Finally, the response and recovery times were determined around 13s and 20min, respectively.
ISSN:0925-4005
1873-3077
DOI:10.1016/j.snb.2012.10.082