Unique Deep Level in Spectroscopic CdZnTe: Compensation, Trapping, and Polarization

• Published in: IEEE transactions on nuclear science 2012-08, Vol.59 (4), p.1531-1535
• Main Authors: Babentsov, V., Franc, J., Dieguez, E., Sochinskyi, M. V., James, R. B.
• Format: Article
• Language: English
• Subjects: Cadmium; Cadmium telluride; Cadmium tellurides; Cadmium zinc tellurides; CdTe; Compensation; Compounds; detector; Electron traps; II-VI semiconductors; Ionization; Photoconductivity; Photonic band gap; Polarization; Semiconductors; Trapping; traps; Zinc
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2012.2191159

As yet, the role of the main native defects in the compensation, trapping, and polarization of x-ray and gamma-ray room-temperature detectors based on semi-insulated cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) is indeterminate. To better quantify it, we assessed the ionization energy, i.e., the binding energy for the hole of the second (2-/1-) acceptor level of Cd vacancies in Cd _{1 - {\rm x}} Zn _{\rm x} Te(x \approx 0.1 ). We characterized the defects in several ways, including measuring the photoconductivity at below-bandgap excitation, and photoconductivity quenching by comparing their positions in the bandgap with that of the native energy-levels in CdTe quantum dots (QDs) and other II-VI semiconductors. In this way, we determined unambiguously that a deep acceptor, Cd vacancy, behaves as a doubly charged acceptor, and the second ionization level is located at \sim {\rm E}_{\rm V}{+}(0.5 \pm 0.05) eV, i.e., relatively far from the midgap {\sim} {\hbox {0.8}} eV. This configuration may determine the lifetime of holes, but it does not stabilize precisely the compensation condition, and it is not responsible for electron trapping and polarization.