An Investigation on the Optimization and Scaling of Complementary SiGe HBTs

We use predictive technology computer-aided design to investigate the device design challenges and optimization issues that will be necessarily encountered in scaling of complementary silicon-germanium (C-SiGe) heterojunction bipolar transistors (HBTs). A fully integrated simulation framework was de...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2013-01, Vol.60 (1), p.34-41
Main Authors: Chakraborty, P. S., Moen, K. A., Cressler, J. D.
Format: Article
Language:English
Subjects:
Applied sciences
Bipolar junction transistor (BJT)
complementary bipolar
complementary silicon-germanium (C-SiGe)
Computer aided design
Computer simulation
Devices
Doping
Electronics
Exact sciences and technology
Germanium
heterojunction bipolar transistor (HBT)
Heterojunction bipolar transistors
Junctions
Optimization
Performance evaluation
scaling roadmap
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
Silicon germanides
Silicon germanium
silicon-germanium (SiGe)
technology computer-aided design (TCAD)
Transistors
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Summary:We use predictive technology computer-aided design to investigate the device design challenges and optimization issues that will be necessarily encountered in scaling of complementary silicon-germanium (C-SiGe) heterojunction bipolar transistors (HBTs). A fully integrated simulation framework was developed to design and optimize device doping and Ge profiles for any given target performance, using important circuit-relevant figures-of-merit. This methodology was successfully utilized to realize device profiles for multiple C-SiGe technology nodes within the context of a C-SiGe scaling roadmap. A method for optimizing the ac performance of SiGe HBTs geared for both high-performance and low-power applications is also presented. The performance metrics of the optimized profiles presented here are then compared with those of existing fabricated devices reported in the literature.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2225838