Thin film LaYbO3 capacitive structures grown by pulsed laser deposition

• Published in: Thin solid films 2013-01, Vol.527, p.81-86
• Main Authors: Vasta, Giuseppe, Feteira, Antonio, Woodward, David I., Walker, David, Thomas, Pam A., Jackson, Timothy J.
• Format: Article
• Language: English
• Subjects: Annealing; Applied sciences; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal structure; Deposition; Dielectric constant; Dielectric properties; Electrodes; Electronics; Exact sciences and technology; Lanthanide ytterbium oxide; Laser deposition; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Permittivity; Photolithography; Physics; Pulsed laser deposition; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Theory and models of film growth; Thin film structure and morphology; Thin films
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2012.12.006

The crystal structure and the dielectric properties of LaYbO3 films grown by pulsed laser deposition and integrated in SrRuO3/LaYbO3/SrRuO3 capacitive structures are reported. Two different fabrication procedures are assessed. When the SrRuO3/LaYbO3/SrRuO3 stack is grown in-situ, the relative permittivity of the LaYbO3 is 35. When instead the lower SrRuO3 electrode layer is patterned by contact photolithography and argon ion milling, prior to the deposition of the LaYbO3, the relative permittivity of the LaYbO3 is 55. In this case, post-growth annealing brings the relative permittivity towards that of the film grown in-situ. In both cases the relative permittivity is higher than the value measured in bulk material. This is attributed to the permittivity being highest along the orthorhombic c-axis. The annealing procedure produced a recrystallization of the LaYbO3 and of the SrRuO3. ► The LaYbO3 (002)o planes are aligned with the (001)c planes of the substrate. ► Capacitive behavior was found for LaYbO3 grown in oxygen at a pressure of 0.40Pa. ► The relative permittivity of the LaYbO3 film is in the range of 31–36.