Pressure-induced electron-spin polarization in the non-magnetic heterostructure

Pressure-induced spin-dependent electron transmission through a non-magnetic III-V semiconductor symmetric well is studied theoretically. The output transmission current polarization at zero magnetic field is investigated. Transparency of electron transmission is calculated as functions of electron...

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Bibliographic Details
Published in:Phase transitions 2012-06, Vol.85 (6), p.471-482
Main Authors: Peter, A. John, Lee, Chang Woo
Format: Article
Language:English
Subjects:
Approximation
Electrons
Heterostructures
Injectors
Joining
Magnetic fields
Mathematical analysis
Phase transitions
Polarization
Pressure
Resonant tunneling
Semiconductors
spin injection
spin-orbit coupling
spin-polarized transport
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Summary:Pressure-induced spin-dependent electron transmission through a non-magnetic III-V semiconductor symmetric well is studied theoretically. The output transmission current polarization at zero magnetic field is investigated. Transparency of electron transmission is calculated as functions of electron energy, pressure and well width, within the one electron band approximation along with the spin-orbit interaction. Enhanced spin-polarized resonant tunneling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level and the compressed spin-polarized due to pressure effect are observed. Our results show that Dresselhaus spin-orbit coupling is dominant for the pressure effect and the computed polarization efficiency increases (i) with the pressure effect and (ii) when the well width is decreased. This effect could be employed in the fabrication of spin filters, spin injectors and detectors based on non-magnetic semiconductors.
ISSN:0141-1594
1029-0338
DOI:10.1080/01411594.2011.624275