GaN-Based LEDs With a Chirped Multiquantum Barrier Structure

We report the fabrication of GaN-based blue light-emitting diodes (LEDs), which separately incorporate the three different electron blocking layers (EBLs), namely, a conventional AlGaN, a uniform multiquantum barrier (UMQB), and a chirped multiquantum barrier (CMQB). On the administration of 20 mA i...

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Bibliographic Details
Published in:IEEE photonics technology letters 2012-09, Vol.24 (18), p.1600-1602
Main Authors: Yu-Yao Lin, Chuang, R. W., Shoou-Jinn Chang, Shuguang Li, Zhi-Yong Jiao, Tsun-Kai Ko, Hon, S. J., Liu, C. H.
Format: Article
Language:English
Subjects:
Aluminum gallium nitride
Aluminum gallium nitrides
Barriers
Chirped multiquantum barrier (CMQB)
Conferences
Current measurement
droop
Fiber optics
Gallium nitride
GaN
Injection current
Light emitting diodes
light-emitting diodes (LEDs)
Optical fibers
Photonics
Power generation
Quantum well devices
Semiconductor device measurement
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Summary:We report the fabrication of GaN-based blue light-emitting diodes (LEDs), which separately incorporate the three different electron blocking layers (EBLs), namely, a conventional AlGaN, a uniform multiquantum barrier (UMQB), and a chirped multiquantum barrier (CMQB). On the administration of 20 mA injection current, the corresponding LED output powers measured were 27.5, 27.2, and 25.4 mW for CMQB LED, UMQB LED, and LED, respectively, with a conventional AlGaN EBL. It was also found that the LED with CMQB EBL exhibited a significantly lower drooping effect and a smaller forward bias as compared with LEDs with a conventional AlGaN EBL and UMQB EBL.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2012.2210541