High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy

Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically aligned rods exhibit a regular hexagon...

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Bibliographic Details
Published in:Optics express 2013-02, Vol.21 (3), p.2733-2740
Main Authors: Tessarek, C, Sarau, G, Kiometzis, M, Christiansen, S
Format: Article
Language:English
Subjects:
Crystallization - methods
Equipment Design
Equipment Failure Analysis
Gallium - chemistry
Materials Testing
Metals - chemistry
Organic Chemicals - chemistry
Surface Plasmon Resonance - instrumentation
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Summary:Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically aligned rods exhibit a regular hexagonal shape with sharp edges and smooth sidewall facets. Cathodo- and microphotoluminescence investigations were carried out on single GaN rods. Whispering gallery modes with quality factors greater than 4000 were measured demonstrating the high morphological and optical quality of the self-assembled GaN rods.
ISSN:1094-4087
1094-4087
DOI:10.1364/oe.21.002733