Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl

Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow...

Full description

Saved in:
Bibliographic Details
Published in:Physical review letters 2013-03, Vol.110 (10), p.100401-100401
Main Authors: Ouardi, Siham, Fecher, Gerhard H, Felser, Claudia, Kübler, Jürgen
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c194t-73ec3757a4c748c5d7312305fc561d73add3d0b6f16b1a8fc21a4d2532ed2a2c3
cites
container_end_page 100401
container_issue 10
container_start_page 100401
container_title Physical review letters
container_volume 110
creator Ouardi, Siham
Fecher, Gerhard H
Felser, Claudia
Kübler, Jürgen
description Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic semiconductor Mn(2)CoAl, an inverse Heusler compound with a Curie temperature of 720 K and a magnetic moment of 2 μ(B). Below 300 K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn(2) CoAl is not only suitable material for room temperature semiconductor spintronics, the robust spin polarization of the spin gapless semiconductors makes it very promising material for spintronics in general.
doi_str_mv 10.1103/PhysRevLett.110.100401
format article
fullrecord <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_proquest_miscellaneous_1319614820</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1319614820</sourcerecordid><originalsourceid>FETCH-LOGICAL-c194t-73ec3757a4c748c5d7312305fc561d73add3d0b6f16b1a8fc21a4d2532ed2a2c3</originalsourceid><addsrcrecordid>eNo1j9FLwzAYxIMgbk7_hZFHXzrzJWnT-jaGbsJEGfpcsuSrq6RNbVJh_vVWnE_HHT-OO0LmwBYATNy-HI5hh19bjPE3WABjksEZmQJTRaIA5IRchvDBGAOe5RdkwkXKgQs-JZsdald_61j7lvqKhq5u6bvuHIZAAza18a0dTPR9uKPxgHSDQ3DYU-Obzg-tpU8tX_mluyLnlXYBr086I28P96-rTbJ9Xj-ultvEQCFjogQaoVKlpVEyN6lVYhzC0sqkGYxGWyss22cVZHvQeWU4aGl5KjharrkRM3Lz19v1_nPAEMumDgad0y36IZQgoMhA5pyN6PyEDvsGbdn1daP7Y_n_XvwA9o1c5Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1319614820</pqid></control><display><type>article</type><title>Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl</title><source>American Physical Society:Jisc Collections:APS Read and Publish 2023-2025 (reading list)</source><creator>Ouardi, Siham ; Fecher, Gerhard H ; Felser, Claudia ; Kübler, Jürgen</creator><creatorcontrib>Ouardi, Siham ; Fecher, Gerhard H ; Felser, Claudia ; Kübler, Jürgen</creatorcontrib><description>Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic semiconductor Mn(2)CoAl, an inverse Heusler compound with a Curie temperature of 720 K and a magnetic moment of 2 μ(B). Below 300 K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn(2) CoAl is not only suitable material for room temperature semiconductor spintronics, the robust spin polarization of the spin gapless semiconductors makes it very promising material for spintronics in general.</description><identifier>EISSN: 1079-7114</identifier><identifier>DOI: 10.1103/PhysRevLett.110.100401</identifier><identifier>PMID: 23521232</identifier><language>eng</language><publisher>United States</publisher><ispartof>Physical review letters, 2013-03, Vol.110 (10), p.100401-100401</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c194t-73ec3757a4c748c5d7312305fc561d73add3d0b6f16b1a8fc21a4d2532ed2a2c3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/23521232$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Ouardi, Siham</creatorcontrib><creatorcontrib>Fecher, Gerhard H</creatorcontrib><creatorcontrib>Felser, Claudia</creatorcontrib><creatorcontrib>Kübler, Jürgen</creatorcontrib><title>Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl</title><title>Physical review letters</title><addtitle>Phys Rev Lett</addtitle><description>Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic semiconductor Mn(2)CoAl, an inverse Heusler compound with a Curie temperature of 720 K and a magnetic moment of 2 μ(B). Below 300 K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn(2) CoAl is not only suitable material for room temperature semiconductor spintronics, the robust spin polarization of the spin gapless semiconductors makes it very promising material for spintronics in general.</description><issn>1079-7114</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNo1j9FLwzAYxIMgbk7_hZFHXzrzJWnT-jaGbsJEGfpcsuSrq6RNbVJh_vVWnE_HHT-OO0LmwBYATNy-HI5hh19bjPE3WABjksEZmQJTRaIA5IRchvDBGAOe5RdkwkXKgQs-JZsdald_61j7lvqKhq5u6bvuHIZAAza18a0dTPR9uKPxgHSDQ3DYU-Obzg-tpU8tX_mluyLnlXYBr086I28P96-rTbJ9Xj-ultvEQCFjogQaoVKlpVEyN6lVYhzC0sqkGYxGWyss22cVZHvQeWU4aGl5KjharrkRM3Lz19v1_nPAEMumDgad0y36IZQgoMhA5pyN6PyEDvsGbdn1daP7Y_n_XvwA9o1c5Q</recordid><startdate>20130308</startdate><enddate>20130308</enddate><creator>Ouardi, Siham</creator><creator>Fecher, Gerhard H</creator><creator>Felser, Claudia</creator><creator>Kübler, Jürgen</creator><scope>NPM</scope><scope>7X8</scope></search><sort><creationdate>20130308</creationdate><title>Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl</title><author>Ouardi, Siham ; Fecher, Gerhard H ; Felser, Claudia ; Kübler, Jürgen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c194t-73ec3757a4c748c5d7312305fc561d73add3d0b6f16b1a8fc21a4d2532ed2a2c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ouardi, Siham</creatorcontrib><creatorcontrib>Fecher, Gerhard H</creatorcontrib><creatorcontrib>Felser, Claudia</creatorcontrib><creatorcontrib>Kübler, Jürgen</creatorcontrib><collection>PubMed</collection><collection>MEDLINE - Academic</collection><jtitle>Physical review letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ouardi, Siham</au><au>Fecher, Gerhard H</au><au>Felser, Claudia</au><au>Kübler, Jürgen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl</atitle><jtitle>Physical review letters</jtitle><addtitle>Phys Rev Lett</addtitle><date>2013-03-08</date><risdate>2013</risdate><volume>110</volume><issue>10</issue><spage>100401</spage><epage>100401</epage><pages>100401-100401</pages><eissn>1079-7114</eissn><abstract>Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gapless magnetic semiconductor Mn(2)CoAl, an inverse Heusler compound with a Curie temperature of 720 K and a magnetic moment of 2 μ(B). Below 300 K, the compound exhibits nearly temperature-independent conductivity, very low, temperature-independent carrier concentration, and a vanishing Seebeck coefficient. The anomalous Hall effect is comparatively low, which is explained by the symmetry properties of the Berry curvature. Mn(2) CoAl is not only suitable material for room temperature semiconductor spintronics, the robust spin polarization of the spin gapless semiconductors makes it very promising material for spintronics in general.</abstract><cop>United States</cop><pmid>23521232</pmid><doi>10.1103/PhysRevLett.110.100401</doi><tpages>1</tpages></addata></record>
fulltext fulltext
identifier EISSN: 1079-7114
ispartof Physical review letters, 2013-03, Vol.110 (10), p.100401-100401
issn 1079-7114
language eng
recordid cdi_proquest_miscellaneous_1319614820
source American Physical Society:Jisc Collections:APS Read and Publish 2023-2025 (reading list)
title Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-17T16%3A05%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pubme&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Realization%20of%20spin%20gapless%20semiconductors:%20the%20Heusler%20compound%20Mn2CoAl&rft.jtitle=Physical%20review%20letters&rft.au=Ouardi,%20Siham&rft.date=2013-03-08&rft.volume=110&rft.issue=10&rft.spage=100401&rft.epage=100401&rft.pages=100401-100401&rft.eissn=1079-7114&rft_id=info:doi/10.1103/PhysRevLett.110.100401&rft_dat=%3Cproquest_pubme%3E1319614820%3C/proquest_pubme%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c194t-73ec3757a4c748c5d7312305fc561d73add3d0b6f16b1a8fc21a4d2532ed2a2c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1319614820&rft_id=info:pmid/23521232&rfr_iscdi=true