Efficiency enhancement of blue InGaN/GaN light-emitting diodes with an AlGaN-GaN-AlGaN electron blocking layer

Blue InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with the conventional AlGaN and AlGaN-GaN-AlGaN (AGA) electron blocking layer (EBL) are investigated numerically. The simulation results show that the LEDs with the AGA EBL exhibit much higher output power and smaller efficiency droop...

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Bibliographic Details
Published in:Journal of applied physics 2012-05, Vol.111 (9), p.094503-094503-4
Main Authors: Xia, Chang Sheng, Li, Z. M. Simon, Lu, Wei, Zhang, Zhi Hua, Sheng, Yang, Hu, Wei Da, Cheng, Li Wen
Format: Article
Language:English
Subjects:
Computer simulation
Confinement
Electrostatic fields
Gallium nitrides
High current
Indium gallium nitrides
Light-emitting diodes
Quantum wells
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Summary:Blue InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with the conventional AlGaN and AlGaN-GaN-AlGaN (AGA) electron blocking layer (EBL) are investigated numerically. The simulation results show that the LEDs with the AGA EBL exhibit much higher output power and smaller efficiency droop at high current as compared to those with the conventional EBL due to the enhancement of the electron confinement and improvement of the hole injection from p-type region, which are induced by the strong electrostatic fields and tunneling effect in the AGA EBL.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4709450