Surface properties of stoichiometric and defect-rich indium oxide films grown by MOCVD

The influence of metalorganic chemical vapor deposition growth conditions on the indium oxide surface properties is investigated using photoelectron spectroscopy. Particular attention is paid to nanocrystalline samples grown at fairly low temperatures which are known for their high sensitivity to oz...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2012-05, Vol.111 (9), p.093704-093704-6
Main Authors: Himmerlich, M., Wang, Ch Y., Cimalla, V., Ambacher, O., Krischok, S.
Format: Article
Language:English
Subjects:
Crystal defects
Crystal structure
Indium oxides
Metalorganic chemical vapor deposition
Nanocrystals
Ozone
Physical properties
Surface properties
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The influence of metalorganic chemical vapor deposition growth conditions on the indium oxide surface properties is investigated using photoelectron spectroscopy. Particular attention is paid to nanocrystalline samples grown at fairly low temperatures which are known for their high sensitivity to ozone. The results are compared to measurements on In 2 O 3 films in cubic and rhombohedral crystal structure. It is shown that the growth conditions have a strong impact on the physical properties and that samples grown at 200°C or below are highly oxygen-deficient and rich in defects, influencing the surface chemical and electronic properties and resulting in high ozone sensitivity.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4704700