Positive gate bias stress instability of carbon nanotube thin film transistors

The effect of positive gate bias stress (PGBS) on random network carbon nanotube-thin film transistor (CNT-TFT) stability on SiO2 and HfO2 oxides was investigated with different gate bias stresses and times. CNT-TFTs showed a logarithmic positive threshold voltage shift ( Delta Vth) with time for a...

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Bibliographic Details
Published in:Applied physics letters 2012-07, Vol.101 (5)
Main Authors: Lee, Sang Won, Lee, Si Young, Lim, Seong Chu, Kwon, dong, Yoon, Sun, Uh, Keehan, Lee, Young Hee
Format: Article
Language:English
Subjects:
Bias
Devices
Gates
Hafnium oxide
Nanostructure
Semiconductor devices
Silicon dioxide
Stresses
Thin films
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Summary:The effect of positive gate bias stress (PGBS) on random network carbon nanotube-thin film transistor (CNT-TFT) stability on SiO2 and HfO2 oxides was investigated with different gate bias stresses and times. CNT-TFTs showed a logarithmic positive threshold voltage shift ( Delta Vth) with time for a PGBS, following a stretched exponential model. Although the saturated Delta Vth was larger on SiO2 than on HfO2, CNT device using SiO2 gate insulator recovered their original characteristics after removal of the stress at room temperature without additional thermal and bias annealing. The CNT-TFTs were found to be more tenable than conventional Si devices against PGBS.
ISSN:0003-6951
DOI:10.1063/1.4740084