Behavior of Au-Si droplets in Si(001) at high temperatures

The transport behavior of Au-Si droplets near the Si(001) surface at elevated temperatures is investigated using transmission electron microscopy. It has been found that Au-Si droplets move differently under different temperatures, which lead to the formation of SiOx surface islands on top of drople...

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Published in:Applied physics letters 2012-07, Vol.101 (5), p.53104
Main Authors: Shao, Y. M., Nie, T. X., Jiang, Z. M., Zou, J.
Format: Article
Language:English
Subjects:
Catalysis
Droplets
Gold
Islands
Movements
Nanowires
Semiconductors
Transport
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description The transport behavior of Au-Si droplets near the Si(001) surface at elevated temperatures is investigated using transmission electron microscopy. It has been found that Au-Si droplets move differently under different temperatures, which lead to the formation of SiOx surface islands on top of droplets, and result in the lateral movements of smaller droplets away from their corresponding surface islands. Since Au droplets have been widely used as catalysts to induce semiconductor nanowires, this study provides insight behavior of Au containing droplets on semiconductor surfaces, which is critical for understanding the formation mechanisms of semiconductor nanowires.
doi_str_mv 10.1063/1.4739413
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source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊（与NSTL共建）
subjects Catalysis
Droplets
Gold
Islands
Movements
Nanowires
Semiconductors
Transport
title Behavior of Au-Si droplets in Si(001) at high temperatures
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