Band alignment of vanadium oxide as an interlayer in a hafnium oxide-silicon gate stack structure

Vanadium oxide (VO2) is a narrow band gap material (Eg = 0.7 eV) with a thermally induced insulator-metal phase transition at ∼343 K and evidence of an electric field induced transition at T < 343 K. To explore the electronic properties of VO2, a sandwich structure was prepared with a 2 nm VO2 la...

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Bibliographic Details
Published in:Journal of applied physics 2012-10, Vol.112 (8)
Main Authors: Zhu, Chiyu, Kaur, Manpuneet, Tang, Fu, Liu, Xin, Smith, David J., Nemanich, Robert J.
Format: Article
Language:English
Subjects:
Alignment
Banded structure
Electric fields
Electronic properties
Hafnium oxide
Offsets
Valence band
Vanadium oxides
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Summary:Vanadium oxide (VO2) is a narrow band gap material (Eg = 0.7 eV) with a thermally induced insulator-metal phase transition at ∼343 K and evidence of an electric field induced transition at T < 343 K. To explore the electronic properties of VO2, a sandwich structure was prepared with a 2 nm VO2 layer embedded between an oxidized Si(100) surface and a 2 nm hafnium oxide (HfO2) layer. The layer structure was confirmed with high resolution transmission electron microscopy. The electronic properties were characterized with x-ray and ultraviolet photoemission spectroscopy, and the band alignment was deduced on both n-type and p-type Si substrates. The valence band offset between VO2 and SiO2 is measured to be 4.0 eV. The valence band offset between HfO2 and VO2 is measured to be ∼3.4 eV. The band relation developed from these results demonstrates the potential for charge storage and switching for the embedded VO2 layer.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4761990