Degradation and phase noise of InAlN/AlN/GaN heterojunction field effect transistors: Implications for hot electron/phonon effects

In15.7%Al84.3%N/AlN/GaN heterojunction field effect transistors have been electrically stressed under four different bias conditions: on-state-low-field stress, reverse-gate-bias stress, off-state-high-field stress, and on-state-high-field stress, in an effort to elaborate on hot electron/phonon and...

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Bibliographic Details
Published in:Applied physics letters 2012-09, Vol.101 (10)
Main Authors: Zhu, C. Y., Wu, M., Kayis, C., Zhang, F., Li, X., Ferreyra, R. A., Matulionis, A., Avrutin, V., Özgür, Ü., Morkoç, H.
Format: Article
Language:English
Subjects:
Channels
Degradation
Field effect transistors
Gallium nitrides
Heterojunctions
Hot electrons
Phonons
Stresses
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Summary:In15.7%Al84.3%N/AlN/GaN heterojunction field effect transistors have been electrically stressed under four different bias conditions: on-state-low-field stress, reverse-gate-bias stress, off-state-high-field stress, and on-state-high-field stress, in an effort to elaborate on hot electron/phonon and thermal effects. DC current and phase noise have been measured before and after the stress. The possible locations of the failures as well as their influence on the electrical properties have been identified. The reverse-gate-bias stress causes trap generation around the gate area near the surface which has indirect influence on the channel. The off-state-high-field stress and the on-state-high-field stress induce deterioration of the channel, reduce drain current and increase phase noise. The channel degradation is ascribed to the hot-electron and hot-phonon effects.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4751037