Quantification of interfacial state density (Dit) at the high-k/III-V interface based on Hall effect measurements

In this work, we propose a method to quantify the density of interfacial states at the oxide/semiconductor interface using only Hall concentration and low frequency capacitance-voltage data. We discuss the advantages of the proposed method over commonly used admittance techniques in characterizing h...

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Bibliographic Details
Published in:Journal of applied physics 2012-09, Vol.112 (5)
Main Authors: Veksler, D., Nagaiah, P., Chidambaram, T., Cammarere, R., Tokranov, V., Yakimov, M., Chen, Y.-T., Huang, J., Goel, N., Oh, J., Bersuker, G., Hobbs, C., Kirsch, P. D., Oktyabrsky, S.
Format: Article
Language:English
Subjects:
Channels
Density
Hall effect
Indium gallium arsenides
Metal oxide semiconductors
Metal oxides
Oxides
Semiconductors
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Summary:In this work, we propose a method to quantify the density of interfacial states at the oxide/semiconductor interface using only Hall concentration and low frequency capacitance-voltage data. We discuss the advantages of the proposed method over commonly used admittance techniques in characterizing highly disordered interfaces between the high-k dielectric and high mobility substrates. This gated Hall method is employed to characterize high-k/IIIV interface quality in metal-oxide semiconductor high electron mobility transistor structures with high mobility InGaAs channels.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4749403