Degenerate parallel conducting layer and conductivity type conversion observed from p -Ge1−ySny (y = 0.06%) grown on n -Si substrate

Electrical properties of p-Ge1−ySny (y = 0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1−ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This...

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Bibliographic Details
Published in:Applied physics letters 2012-09, Vol.101 (13)
Main Authors: Ryu, Mee-Yi, Yeo, Y. K., Ahoujja, M., Harris, Tom, Beeler, Richard, Kouvetakis, John
Format: Article
Language:English
Subjects:
Carrier density
Conduction
Conductivity
Conversion
Electrical properties
Resistivity
Silicon
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Summary:Electrical properties of p-Ge1−ySny (y = 0.06%) grown on n-Si substrate were investigated through temperature-dependent Hall-effect measurements. It was found that there exists a degenerate parallel conducting layer in Ge1−ySny/Si and a second, deeper acceptor in addition to a shallow acceptor. This parallel conducting layer dominates the electrical properties of the Ge1−ySny layer below 50 K and also significantly affects those properties at higher temperatures. Additionally, a conductivity type conversion from p to n was observed around 370 K for this sample. A two-layer conducting model was used to extract the carrier concentration and mobility of the Ge1−ySny layer alone.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4754625