Successive bi-stable quantum phases in HMTSF-TCNQ induced by field-sweep

With the interest of ground state near CDW at low temperature, the electronic properties under high pressure, at low temperature and in high magnetic field of HMTSF-TCNQ are examined. At 1.5–1.6 GPa, but not at P=0, a novel hysteretic behavior irrespective of magnetic field orientation and probable...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2010-06, Vol.405 (11), p.S111-S112
Main Authors: Murata, K., Yokogawa, K., Brooks, J.S., Kismarahardja, A., Steven, E., Kano, M., Seno, Y., Tamilselvan, N.R., Yoshino, H., Sasaki, T., Jérome, D., Senzier, P., Bechgaard, K., Uruichi, M., Yakushi, K.
Format: Article
Language:English
Subjects:
Bi-stable states
CDW
Charge-density-wave systems
Collective effects
Condensed matter
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity of specific materials
Electron states
Electronic transport in condensed matter
Exact sciences and technology
HMTSF
Hysteresis
Magnetic fields
Magnetoresistance
Magnetoresistivity
Orientation
Oscillations
Phases
Physics
Polymers
organic compounds (including organic semiconductors)
Quantum oscillations
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Summary:With the interest of ground state near CDW at low temperature, the electronic properties under high pressure, at low temperature and in high magnetic field of HMTSF-TCNQ are examined. At 1.5–1.6 GPa, but not at P=0, a novel hysteretic behavior irrespective of magnetic field orientation and probable quantum oscillations in a specific orientation of magnetic field in magnetoresistance are found.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2010.02.012