Resistive switching and activity-dependent modifications in Ni-doped graphene oxide thin films

The resistive switching (RS) mechanism in Ni-doped graphene oxide (GO) devices is studied. We found that RS depends strongly on the fabrication method of the GO sheet and on the electrode material. Resistive switching in GO-devices can be caused by the diffusion of ions from metallic electrode or by...

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Bibliographic Details
Published in:Applied physics letters 2012-08, Vol.101 (6), p.63104
Main Authors: Pinto, S., Krishna, R., Dias, C., Pimentel, G., Oliveira, G. N. P., Teixeira, J. M., Aguiar, P., Titus, E., Gracio, J., Ventura, J., Araujo, J. P.
Format: Article
Language:English
Subjects:
Devices
Electrodes
Graphene
Migration
Nickel
Oxides
Switching
Thin films
Voltage
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Summary:The resistive switching (RS) mechanism in Ni-doped graphene oxide (GO) devices is studied. We found that RS depends strongly on the fabrication method of the GO sheet and on the electrode material. Resistive switching in GO-devices can be caused by the diffusion of ions from metallic electrode or by the migration of oxygen groups, depending on the fabrication process. We also show that GO-based structures possess activity-dependent modification capabilities, emphasized by the increase/decrease of device conductance after consecutive voltage sweeps of opposite polarity. Our results allow a better understanding of bipolar RS, towards future non-volatile memories and neuromorphic systems.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4742912