The site effects of B or N doping on I-V characteristics of a single pyrene molecular device

Using the non-equilibrium Green's function method combined with the density functional theory, the electronic transport properties of boron (B) or nitrogen (N) doped pyrene molecular devices are investigated. The results show that effects of B or N doping on I-V characteristics of a single pyre...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2012-08, Vol.101 (7), p.73104
Main Authors: Fan, Zhi-Qiang, Zhang, Zhen-Hua, Qiu, Ming, Deng, Xiao-Qing, Tang, Gui-Ping
Format: Article
Language:English
Subjects:
Boron
Density functional theory
Devices
Doping
Electronics
Green's functions
Pyrenes
Transport properties
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Using the non-equilibrium Green's function method combined with the density functional theory, the electronic transport properties of boron (B) or nitrogen (N) doped pyrene molecular devices are investigated. The results show that effects of B or N doping on I-V characteristics of a single pyrene molecular device are not constant and can be changed by varying doped sites. More importantly, significant negative differential resistance (NDR) behaviors are found in B-doped pyrene molecular devices. The peak-to-valley ratio which is a typical character of NDR behavior is also sensitive to the B doped site.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4745842