Photocarrier generation in CuxO thin films deposited by radio frequency sputtering

Copper oxides (CuxO) thin films were deposited using radio frequency (RF) sputtering on glass substrates. By tuning the argon (Ar) partial pressure during deposition, cuprous oxide (Cu2O), cupric oxide (CuO), or their mixed phase could be achieved. Drastic variations in the Hall mobility, hole densi...

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Bibliographic Details
Published in:Applied physics letters 2013-01, Vol.102 (3)
Main Authors: Viet Pham, Thien, Rao, Manohar, Andreasson, P., Peng, Yuan, Wang, Junling, Jinesh, K. B.
Format: Article
Language:English
Subjects:
Carrier lifetime
COPPER OXIDE
CUPRIC OXIDE
CUPROUS OXIDE
DEPOSITION
ELECTRICAL CONDUCTIVITY
Electrical resistivity
FREQUENCY
OXIDES
Radio frequencies
SPUTTERING
THIN FILMS
Tuning
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Summary:Copper oxides (CuxO) thin films were deposited using radio frequency (RF) sputtering on glass substrates. By tuning the argon (Ar) partial pressure during deposition, cuprous oxide (Cu2O), cupric oxide (CuO), or their mixed phase could be achieved. Drastic variations in the Hall mobility, hole density, and resistivity of the samples were observed due to the presence of different phases in the films. Kelvin probe studies indicate that the photo-generated carriers have lower recombination rate in pure Cu2O phase. This was further validated by transient absorption measurements, where the estimated carrier lifetime for Cu2O was much larger that other phases.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4788680