Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures

The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which...

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Bibliographic Details
Published in:Applied physics letters 2013-02, Vol.102 (5)
Main Authors: Guduru, V. K., Granados del Aguila, A., Wenderich, S., Kruize, M. K., McCollam, A., Christianen, P. C. M., Zeitler, U., Brinkman, A., Rijnders, G., Hilgenkamp, H., Maan, J. C.
Format: Article
Language:English
Subjects:
Carriers
Channels
Conduction
Excitation
Heterostructures
Illumination
Nonlinearity
Strontium titanates
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Summary:The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high mobility electron channel in addition to a low mobility electron channel which exists before illumination.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4790844