Strong heavy-to-light hole intersubband absorption in the valence band of carbon-doped GaAs/AlAs superlattices

We report strong mid-infrared absorption of in-plane polarized light due to heavy-to-light hole intersubband transitions in the valence band of C-doped GaAs quantum wells with AlAs barriers. The transition energies are well reproduced by theoretical calculations including layer inter-diffusion. The...

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Bibliographic Details
Published in:Journal of applied physics 2013-02, Vol.113 (5)
Main Authors: Hossain, M. I., Ikonic, Z., Watson, J., Shao, J., Harrison, P., Manfra, M. J., Malis, O.
Format: Article
Language:English
Subjects:
Gallium arsenide
Gallium arsenides
Nanocomposites
Nanomaterials
Nanostructure
Quantum wells
Semiconductors
Valence band
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Summary:We report strong mid-infrared absorption of in-plane polarized light due to heavy-to-light hole intersubband transitions in the valence band of C-doped GaAs quantum wells with AlAs barriers. The transition energies are well reproduced by theoretical calculations including layer inter-diffusion. The inter-diffusion length was estimated to be 8 ± 2 Å, a value that is consistent with electron microscopy measurements. These results highlight the importance of modeling the nanoscale structure of the semiconductors for accurately reproducing intra-band transition energies of heavy carriers such as the holes.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4790305