Identification of the native defect doping mechanism in amorphous indium zinc oxide thin films studied using ultra high pressure oxidation

The mechanism of native defect doping in amorphous In-Zn-O (a-IZO) has not previously been established but is likely associated with native oxygen defect doping. We have used high pressure oxidation and defect equilibrium analysis to show a −1/6 power dependence of carrier density on oxygen fugacity...

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Bibliographic Details
Published in:Applied physics letters 2013-02, Vol.102 (5)
Main Authors: Lee, Sunghwan, Paine, David C.
Format: Article
Language:English
Subjects:
Carrier density
Channels
Defects
Devices
Doping
Fugacity
Oxidation
Thin films
Threshold voltage
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Summary:The mechanism of native defect doping in amorphous In-Zn-O (a-IZO) has not previously been established but is likely associated with native oxygen defect doping. We have used high pressure oxidation and defect equilibrium analysis to show a −1/6 power dependence of carrier density on oxygen fugacity in a-IZO. This dependency is predicted for oxygen vacancy-like donor defects. Extrapolation of equilibrium constants established at high pressures to atmospheric pressure reveals that the equilibrium carrier density in a-IZO at 200 °C is higher (>1020/cm3) than typical as-deposited channel carrier densities (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4790187