Band alignment between Ta2O5 and metals for resistive random access memory electrodes engineering

Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky and hole barrier heights at the interface between electrode and Ta2O5 were obtained, where the electr...

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Bibliographic Details
Published in:Applied physics letters 2013-02, Vol.102 (6)
Main Authors: Zhuo, V. Y.-Q., Jiang, Y., Li, M. H., Chua, E. K., Zhang, Z., Pan, J. S., Zhao, R., Shi, L. P., Chong, T. C., Robertson, J.
Format: Article
Language:English
Subjects:
Alignment
Band spectra
Electrodes
Fermi surfaces
Random access memory
Tantalum oxides
Work functions
X-rays
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Summary:Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky and hole barrier heights at the interface between electrode and Ta2O5 were obtained, where the electrodes consist of materials with low to high work function (Φm,vac from 4.06 to 5.93 eV). Effective metal work functions were extracted to study the Fermi level pinning effect and to discuss the dominant conduction mechanism. An accurate band alignment between electrodes and Ta2O5 is obtained and can be used for RRAM electrode engineering and conduction mechanism study.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4792274