Pressure-induced phase transformation of In2Se3

In2Se3 has potential as a phase-change material for memory applications. Understanding its phase diagram is important to achieve controlled switching between phases. Using x-ray diffraction and a diamond-anvil cell, the pressure-dependent structural properties of In2Se3 powder were studied at room t...

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Bibliographic Details
Published in:Applied physics letters 2013-02, Vol.102 (6)
Main Authors: Rasmussen, Anya M., Teklemichael, Samuel T., Mafi, Elham, Gu, Yi, McCluskey, Matthew D.
Format: Article
Language:English
Subjects:
Critical pressure
Diamonds
Diffraction
Phase diagrams
Phase transformations
Semiconductors
Switching
X-rays
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Summary:In2Se3 has potential as a phase-change material for memory applications. Understanding its phase diagram is important to achieve controlled switching between phases. Using x-ray diffraction and a diamond-anvil cell, the pressure-dependent structural properties of In2Se3 powder were studied at room temperature. α-In2Se3 transforms into the β phase at 0.7 GPa, an order of magnitude lower than phase-transition critical pressures in typical semiconductors. The β phase persists upon decompression to ambient pressure. Raman spectroscopy experiments confirm this result. The bulk moduli are reported and the c/a ratio for the β phase is shown to have a highly nonlinear dependence on pressure.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4792313