Schottky-barrier solar cell based on layered semiconductor tungsten disulfide nanofilm

We demonstrated Schottky-barrier solar cell using layer-structured semiconductor tungsten disulfide (WS2) nanofilm (NF) as the photo-active material. WS2 NFs were synthesized by chemical-vapor-deposition initiated on the surface of tungsten. The growth of WS2 NF was confirmed by Raman signature peak...

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Bibliographic Details
Published in:Applied physics letters 2012-12, Vol.101 (26)
Main Authors: Shanmugam, Mariyappan, Bansal, Tanesh, Durcan, Chris A., Yu, Bin
Format: Article
Language:English
Subjects:
Disulfides
Nanomaterials
Nanostructure
Photovoltaic cells
Semiconductors
Solar cells
Surface chemistry
Tungsten
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Summary:We demonstrated Schottky-barrier solar cell using layer-structured semiconductor tungsten disulfide (WS2) nanofilm (NF) as the photo-active material. WS2 NFs were synthesized by chemical-vapor-deposition initiated on the surface of tungsten. The growth of WS2 NF was confirmed by Raman signature peaks representing active modes of E12g (351.5 cm−1) for in-plane and A1g (420.1 cm−1) for out-of-plane atomic vibrations, respectively. The ITO/WS2/Au Schottky-barrier solar cell was demonstrated by a layer-enabled assembling process, showing a photo-conversion efficiency of 1.7% and effective photon absorption in the wavelength range of 350 nm–950 nm. The Mott-Schottky characteristic suggests low density of bulk and interface defects in WS2 NF attributed to surfaces with negligible amount of dangling bonds which is the essential nature of layered semiconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4773525