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Enhanced light trapping in the silicon substrate with plasmonic Ag nanocones
Ag nanocone enhanced light trapping in the silicon substrate is numerically investigated. For a wide range of the dielectric spacer thickness, the normalized scattering cross section of the rear located particles is higher than that of the front located particles, which is contrary to previous repor...
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Published in: | Optics letters 2013-02, Vol.38 (4), p.395-397 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Ag nanocone enhanced light trapping in the silicon substrate is numerically investigated. For a wide range of the dielectric spacer thickness, the normalized scattering cross section of the rear located particles is higher than that of the front located particles, which is contrary to previous reports. This design not only avoids the conflict with the detrimental Fano effect but is also beneficial to the rear located particles. The fraction of the incident light scattered into silicon is calculated. The path length enhancement is assessed. The Ag nanocone shows highly competitive light-trapping potential. |
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ISSN: | 0146-9592 1539-4794 |
DOI: | 10.1364/OL.38.000395 |