Inertness and degradation of (0001) surface of Bi2Se3 topological insulator

Inertness of the cleaved (0001) surface of the Bi2Se3 single crystal, grown by modified Bridgman method, to oxidation has been demonstrated by X-ray photoelectron spectroscopy, scanning tunneling microscopy, and by ab initio DFT calculations. No intrinsic bismuth and selenium oxides are formed on th...

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Bibliographic Details
Published in:Journal of applied physics 2012-12, Vol.112 (11)
Main Authors: Golyashov, V. A., Kokh, K. A., Makarenko, S. V., Romanyuk, K. N., Prosvirin, I. P., Kalinkin, A. V., Tereshchenko, O. E., Kozhukhov, A. S., Sheglov, D. V., Eremeev, S. V., Borisova, S. D., Chulkov, E. V.
Format: Article
Language:English
Subjects:
Bismuth
Degradation
Insulators
Lattice vacancies
Mathematical analysis
Nitrogen dioxide
Scanning tunneling microscopy
Surface chemistry
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Summary:Inertness of the cleaved (0001) surface of the Bi2Se3 single crystal, grown by modified Bridgman method, to oxidation has been demonstrated by X-ray photoelectron spectroscopy, scanning tunneling microscopy, and by ab initio DFT calculations. No intrinsic bismuth and selenium oxides are formed on the low-defect, atomically flat Bi2Se3(0001)-(1×1) surface after a long-time air exposure. The inertness of Bi2Se3(0001) to O2 and NO2, as well as bismuth-oxygen bonding formation under molecular adsorption in the Se vacancy was supported by DFT calculations.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4767458