Low-noise single-photon avalanche diodes in 0.25 μm high-voltage CMOS technology

By using 0.25 μm high-voltage CMOS technology, we have designed and fabricated a structure of single-photon detectors. The new single-photon avalanche diode (SPAD) has (to our knowledge) the lowest dark count rate per unit area at room temperature without any technology customization. Our design is...

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Bibliographic Details
Published in:Optics letters 2013-01, Vol.38 (1), p.55-57
Main Authors: Hsu, Fang-Ze, Wu, Jau-Yang, Lin, Sheng-Di
Format: Article
Language:English
Subjects:
Arrays
Avalanche diodes
CMOS
Counting
Customizing
Detectors
Imaging
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Summary:By using 0.25 μm high-voltage CMOS technology, we have designed and fabricated a structure of single-photon detectors. The new single-photon avalanche diode (SPAD) has (to our knowledge) the lowest dark count rate per unit area at room temperature without any technology customization. Our design is promising for realizing low-cost and high-performance SPAD arrays for imaging applications.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.38.000055