Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots

Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2013-04, Vol.25 (14), p.1987-1992
Main Authors: Yoon, Jung Ho, Han, Jeong Hwan, Jung, Ji Sim, Jeon, Woojin, Kim, Gun Hwan, Song, Seul Ji, Seok, Jun Yeong, Yoon, Kyung Jean, Lee, Min Hwan, Hwang, Cheol Seong
Format: Article
Language:English
Subjects:
nanodots
resistive switching memory
thin films
uniformity
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Summary:Limiting the location where electron injection occurs at the cathode interface to a narrower region is the key factor for achieving a highly improved RS performance, which can be achieved by including Ru Nanodots. The development of a memory cell structure truly at the nanoscale with such a limiting factor for the electric‐field distribution can solve the non‐uniformity issue of future ReRAM.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201204572