Ferroelectric polymer-gated graphene memory with high speed conductivity modulation

• Published in: Nanotechnology 2013-05, Vol.24 (17), p.175202-175202
• Main Authors: Hwang, Hyeon Jun, Yang, Jin Ho, Lee, Young Gon, Cho, Chunhum, Kang, Chang Goo, Kang, Soo Cheol, Park, Woojin, Lee, Byoung Hun
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Dielectric, piezoelectric, ferroelectric and antiferroelectric materials; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Materials science; Physics; Specific materials
• ISSN: 0957-4484; 1361-6528
• DOI: 10.1088/0957-4484/24/17/175202

The feasibility of a high speed ferroelectric graphene memory device using a ferroelectric polymer (PVDF-TrFE)/graphene stack has been demonstrated. The conductivity of this metal-ferroelectric-graphene (MFG) device could be modulated up to 775% with a very fast programming speed down to 10 ns. Also, programmed states were maintained up to 1000 s with endurance over 1000 cycles. In addition to demonstrating a single memory device, the array-level integration and cell write/read functionality of a 4 × 4 MFG array adopting a graphene bit line has also been confirmed to show the feasibility of MFG memory.