UIS Analysis and Characterization of the Inverted L-Shaped Source Trench Power MOSFET

In this paper, the unclamped inductive switching (UIS) behavior of an inverted L-shaped source trench power MOSFET is numerically analyzed and experimentally characterized. The measured avalanche energy absorption at UIS of the new trench power MOSFET is 2.1 times that of the conventional trench pow...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2011-11, Vol.58 (11), p.3984-3990, Article 3984
Main Authors: Ng, J. C. W., Sin, J. K. O., Sumida, H., Toyoda, Y., Ohi, A., Tanaka, H., Nishimura, T., Ueno, K.
Format: Article
Language:English
Subjects:
Applied sciences
Avalanche current
avalanche ruggedness
Avalanches
Current density
Devices
Electric potential
Electrical engineering. Electrical power engineering
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
energy absorption
Exact sciences and technology
Junctions
Logic gates
Mathematical analysis
Mathematical models
MOSFETs
Other multijunction devices. Power transistors. Thyristors
Power electronics, power supplies
Power MOSFET
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Studies
Switching
Transistors
trench power MOSFET
Trenches
unclamped inductive switching (UIS)
Voltage measurement
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Summary:In this paper, the unclamped inductive switching (UIS) behavior of an inverted L-shaped source trench power MOSFET is numerically analyzed and experimentally characterized. The measured avalanche energy absorption at UIS of the new trench power MOSFET is 2.1 times that of the conventional trench power MOSFET. This is explained by numerical simulation, which shows that the voltage drop across the emitter/base junction in the parasitic bipolar junction transistor of the new structure is smaller than that of the conventional structure. The influence of structural and device size variation of the new trench power MOSFET on UIS performance is also investigated. Results show that the avalanche current density at UIS is a strong function of the p + -region width and the device size. Furthermore, the effect becomes very significant as the device size becomes very small.
ISSN:0018-9383
1557-9646
1557-9646
DOI:10.1109/TED.2011.2164081