Indium–tin-oxide coatings for applications in photovoltaics and displays deposited using rotary ceramic targets: Recent insights regarding process stability and doping level

• Published in: Thin solid films 2013-04, Vol.532, p.94-97
• Main Authors: Lippens, Paul, Büchel, Michal, Chiu, David, Szepesi, Chris
• Format: Article
• Language: English
• Subjects: Applied sciences; Coatings; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Deposition; Deposition by sputtering; Direct current; Doping; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Energy; Exact sciences and technology; Heterojunction crystalline silicon solar cell; Indium tin oxide; ITO; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Natural energy; Photovoltaic conversion; Physics; Rotary magnetron; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; Tin dioxide; Touch panel
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2012.12.116

Several aspects related to high power sputtering with industrial scale sintered ceramic rotary indium–tin-oxide (ITO) targets are presented in the first part of this paper. In particular, the process stability and target integrity upon sputtering with ≥20kW/m power load and the influence of the gap size between cylindrical segments are discussed. Results show that, in order to avoid nodule formation and deposition rate fluctuations, direct current (DC) power load needs to be limited well below 20kW/m over long sputter runs. Additional work demonstrates that at a gap size at or below 0.15mm, strongly adhering deposits form readily between cylindrical segments which are not observed with standard 0.35mm gaps. The influence of Sn doping level on electro-optical properties of thin films targeting an application such as hetero-junction c-Si solar cells is also investigated. Again, rotary targets operated at high power (10kW/m) are used, including standard grade ITO containing 10wt.% SnO2 and another composition with only 3wt.% SnO2. The influence of H2 and different concentrations of O2 in the sputter gas is analysed for both target materials. Results indicate that although coatings derived from the lower-doped ITO exhibit considerably less absorption in the NIR due to lower carrier concentrations, their resistivity is nearly 30% higher than that from the standard ITO coating.