Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface

In this letter, the nitride-based thin-film light-emitting diodes (TFLEDs) with eight-fold photonic quasi-crystal (PQC) surfaces are proposed and demonstrated by a combination of wafer bonding, laser lift-off, and electron-beam lithography processes. By adopting a PQC surface, the light-output power...

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Bibliographic Details
Published in:IEEE photonics technology letters 2009-03, Vol.21 (5), p.331-333
Main Authors: Lee, Chia-En, Lai, Chun-Feng, Lee, Yea-Chen, Kuo, Hao-Chung, Lu, Tien-Chang, Wang, Shing-Chung
Format: Article
Language:English
Subjects:
Bonding
Conferences
Electron beam lithography
Fiber optics
Fluorescent lamps
laser lift-off (LLO)
Lasers
Light emitting diodes
Lithography
Optical fibers
Photonic crystals
photonic quasi-crystal (PQC)
Photonics
Rough surfaces
Surface emitting lasers
Surface morphology
Surface roughness
Thin films
thin-film light-emitting diodes (TFLEDs)
Transistors
Wafer bonding
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Summary:In this letter, the nitride-based thin-film light-emitting diodes (TFLEDs) with eight-fold photonic quasi-crystal (PQC) surfaces are proposed and demonstrated by a combination of wafer bonding, laser lift-off, and electron-beam lithography processes. By adopting a PQC surface, the light-output power (at 350 mA) of the PQC-TFLEDs exhibits 140% output power enhancement as compared with that of TFLEDs without a PQC surface.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2008.2010953