A subthreshold current model for nanoscale short channel junctionless MOSFETs applicable to symmetric and asymmetric double-gate structure

► An junctionless short channel DG subthreshold current model has been proposed. ► It is applicable to both symmetric and asymmetric junctionless MOSFETs. ► It has been verified and matches well with TCAD simulations’ results. We proposed models of subthreshold characteristics for deep nanoscale sho...

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Bibliographic Details
Published in:Solid-state electronics 2013-04, Vol.82, p.77-81
Main Authors: Jin, Xiaoshi, Liu, Xi, Kwon, Hyuck-In, Lee, Jung-Hee, Lee, Jong-Ho
Format: Article
Language:English
Subjects:
Applied sciences
Asymmetry
Channels
Double-gate MOSFETs
Electronics
Exact sciences and technology
Gates
Junctionless
Mathematical models
Modeling
MOSFETs
Nanocomposites
Nanomaterials
Nanoscale
Nanostructure
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Short channel
Transistors
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Summary:► An junctionless short channel DG subthreshold current model has been proposed. ► It is applicable to both symmetric and asymmetric junctionless MOSFETs. ► It has been verified and matches well with TCAD simulations’ results. We proposed models of subthreshold characteristics for deep nanoscale short channel asymmetric junctionless Double-Gate (DG) MOSFETs. Models were derived by solving 2-D Poisson’s equation using variable separation technique. The subthreshold behavior with structure asymmetry such as different gate oxide thicknesses and different gate biases between the front-gate and back-gate can be exactly described. Design parameters such as body doping, body thickness and channel length were considered. The models were verified by comparing with device simulations’ results.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2013.02.004