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FSI implications of EMC rheological properties to 3D IC with TSV structures during plastic encapsulation process

In this paper, an efficient numerical approach has been adopted to analyze the fluid/structure interaction (FSI) implications to 3D IC with through-silicon via (TSV) structures during plastic encapsulation process, under the effect of different EMC rheological properties. A simultaneous or direct so...

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Bibliographic Details
Published in:Microelectronics and reliability 2013-04, Vol.53 (4), p.600-611
Main Authors: Ong, Ernest E.S., Abdullah, M.Z., Loh, W.K., Ooi, C.K., Chan, R.
Format: Article
Language:English
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Summary:In this paper, an efficient numerical approach has been adopted to analyze the fluid/structure interaction (FSI) implications to 3D IC with through-silicon via (TSV) structures during plastic encapsulation process, under the effect of different EMC rheological properties. A simultaneous or direct solution procedure is employed to solve the solution variables of fluid/structural domain together. Therefore, this approach can provide better visualization of the actual plastic encapsulation process by considering FSI phenomenon during the process. Different epoxy molding compound (EMC) rheological properties have resulted dissimilar fluid flow characteristics, pressure distribution, air void entrapment level, structural displacement and von Mises stress, which are discussed in the paper. Unfavorable results are obtained when higher viscous flow takes place. EMC flow front prediction has been validated with the experimental results from literature. The numerical approach and results presented in this paper are able to provide useful information for the works in optimizing plastic encapsulation process.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2012.10.015