Near-infrared photoluminescence properties of neodymium in in situ doped AlN grown using plasma-assisted molecular beam epitaxy

We present luminescence spectroscopy measurements of in situ Nd doped AlN grown by plasma-assisted molecular beam epitaxy. A Nd concentration as high as 0.08 at. % is incorporated into the host material. The Nd incorporation efficiency within the ADM matrix is found to be highly sensitive to the A1...

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Bibliographic Details
Published in:Optical materials express 2011-05, Vol.1 (1), p.78-84
Main Authors: Metcalfe, Grace D., Readinger, Eric D., Enck, Ryan, Shen, Hongen, Wraback, Michael, Woodward, Nathaniel T., Poplawsky, Jon, Dierolf, Volkmar
Format: Article
Language:English
Subjects:
Aluminum nitride
Excitation spectra
Luminescence
Molecular beam epitaxy
Neodymium
Photoluminescence
Spectra
Spectroscopy
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Summary:We present luminescence spectroscopy measurements of in situ Nd doped AlN grown by plasma-assisted molecular beam epitaxy. A Nd concentration as high as 0.08 at. % is incorporated into the host material. The Nd incorporation efficiency within the ADM matrix is found to be highly sensitive to the A1 flux but independent of the substrate temperature (between 800 degree C to 950 degree C). Photoluminescence, photoluminescence excitation, and combined excitation-emission spectroscopy (CEES) spectra are used to identify the Stark sublevels of the following manifolds: super(4)I sub(9/2), super(4)I sub(11/2), super(4)I sub(13/2), super(4)F sub(3/2), super(4)F sub(5/2), super(2)H sub(9/2), super(4)F sub(7/2), super(4)S sub(3/2), super(4)G sub(5/2), and super(4)G sub(7/2). A main Nd incorporation site and two minority sites are identified using CEES measurements.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.1.000078