Self-assembled monolayer assisted bonding of Si and InP

A versatile procedure for the low-temperature bonding of silicon and indium-phosphide to silicon is proposed and demonstrated. The procedure relies on the deposition and functionalization of self-assembled, single molecular layers on the surface of one substrate, and the subsequent attachment of the...

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Bibliographic Details
Published in:Optical materials express 2012-08, Vol.2 (8), p.1141-1148
Main Authors: Bakish, I., Artel, V., Ilovitsh, T., Shubely, M., Ben-Ezra, Y., Zadok, A., Sukenik, C. N.
Format: Article
Language:English
Subjects:
Attachment
Bonding
Deposition
Devices
Indium phosphides
Monolayers
Silicon
Surface chemistry
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Summary:A versatile procedure for the low-temperature bonding of silicon and indium-phosphide to silicon is proposed and demonstrated. The procedure relies on the deposition and functionalization of self-assembled, single molecular layers on the surface of one substrate, and the subsequent attachment of the monolayer to the surface of the other substrate with or without its own monolayer coating. The process is applicable to the fabrication of hybrid-silicon, active photonic devices.
ISSN:2159-3930
2159-3930
DOI:10.1364/OME.2.001141