Electrically controlled Goos-Hänchen shift of a light beam reflected from the metal-insulator-semiconductor structure

We proposed a scheme to manipulate the Goos-Hänchen shift of a light beam reflected from the depletion-type device via external voltage bias. It is shown that the lateral shift of the reflected probe beam can be easily controlled by adjusting the reverse voltage bias and the incidence angle. Using t...

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Bibliographic Details
Published in:Optics express 2013-05, Vol.21 (9), p.10430-10439
Main Authors: Luo, Changyou, Guo, Jun, Wang, Qingkai, Xiang, Yuanjiang, Wen, Shuangchun
Format: Article
Language:English
Subjects:
Computer Simulation
Computer-Aided Design
Electric Conductivity
Electromagnetic Fields
Electronics - instrumentation
Equipment Design
Equipment Failure Analysis
Lenses
Metals - chemistry
Models, Theoretical
Refractometry - instrumentation
Semiconductors
Surface Plasmon Resonance - instrumentation
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Summary:We proposed a scheme to manipulate the Goos-Hänchen shift of a light beam reflected from the depletion-type device via external voltage bias. It is shown that the lateral shift of the reflected probe beam can be easily controlled by adjusting the reverse voltage bias and the incidence angle. Using this scheme, the lateral shift can be tuned from negative to positive, without changing the original structure of the depletion-type device. Numerical calculations further indicate that the influence of structure parameters and light wavelength can be reduced via readjustment of the reverse bias. The proposed structure has the potential application for the integrated electronic devices.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.21.010430