Thermal oxidation of A super(III)B super(V) semiconductors with V sub(2)O sub(5) nanolayers on the surface

The specific features of the interaction of vanadium(V) oxide nanofilms with the surface of gallium arsenide and indium phosphide semiconductors under thermal oxidation conditions have been considered. The kinetics and mechanism of thermal oxidation of GaAs and InP with deposited V sub(2)O sub(5) la...

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Bibliographic Details
Published in:Glass physics and chemistry 2011-04, Vol.37 (2), p.230-234
Main Authors: Mittova, IYa, Tomina, E V, Lapenko, A A, Sladkopevtsev, B V
Format: Article
Language:English
Subjects:
Gallium arsenide
Indium phosphides
Nanocomposites
Nanomaterials
Nanostructure
Oxidation
Oxides
Semiconductors
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Summary:The specific features of the interaction of vanadium(V) oxide nanofilms with the surface of gallium arsenide and indium phosphide semiconductors under thermal oxidation conditions have been considered. The kinetics and mechanism of thermal oxidation of GaAs and InP with deposited V sub(2)O sub(5) layers 15 and 25 nm in thickness have been studied. It has been revealed that vanadium(V) oxide exerts a specific effect on the oxidation of gallium arsenide and indium phosphide as compared to other d-metal oxides. It has been established that the oxidation occurs with the formation of a phase predominantly consisting of indium phosphates or gallium arsenates and intermediate products based on vanadium compounds in different oxidation states. Schemes have been proposed for the development of the oxidation processes with due regard for the chemical nature of vanadium(V) oxide.
ISSN:1087-6596
1608-313X
DOI:10.1134/S1087659611020106