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Thermal oxidation of A super(III)B super(V) semiconductors with V sub(2)O sub(5) nanolayers on the surface

The specific features of the interaction of vanadium(V) oxide nanofilms with the surface of gallium arsenide and indium phosphide semiconductors under thermal oxidation conditions have been considered. The kinetics and mechanism of thermal oxidation of GaAs and InP with deposited V sub(2)O sub(5) la...

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Published in:	Glass physics and chemistry 2011-04, Vol.37 (2), p.230-234
Main Authors:	Mittova, IYa, Tomina, E V, Lapenko, A A, Sladkopevtsev, B V
Format:	Article
Language:	English
Subjects:	Gallium arsenide Indium phosphides Nanocomposites Nanomaterials Nanostructure Oxidation Oxides Semiconductors
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container_title	Glass physics and chemistry
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creator	Mittova, IYa Tomina, E V Lapenko, A A Sladkopevtsev, B V
description	The specific features of the interaction of vanadium(V) oxide nanofilms with the surface of gallium arsenide and indium phosphide semiconductors under thermal oxidation conditions have been considered. The kinetics and mechanism of thermal oxidation of GaAs and InP with deposited V sub(2)O sub(5) layers 15 and 25 nm in thickness have been studied. It has been revealed that vanadium(V) oxide exerts a specific effect on the oxidation of gallium arsenide and indium phosphide as compared to other d-metal oxides. It has been established that the oxidation occurs with the formation of a phase predominantly consisting of indium phosphates or gallium arsenates and intermediate products based on vanadium compounds in different oxidation states. Schemes have been proposed for the development of the oxidation processes with due regard for the chemical nature of vanadium(V) oxide.
doi_str_mv	10.1134/S1087659611020106
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subjects	Gallium arsenide Indium phosphides Nanocomposites Nanomaterials Nanostructure Oxidation Oxides Semiconductors
title	Thermal oxidation of A super(III)B super(V) semiconductors with V sub(2)O sub(5) nanolayers on the surface
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