Improved leakage property and reduced crystallization temperature by V2O5 seed layer in K0.4Na0.6NbO3 thin films derived from chemical solution deposition

• Published in: Journal of alloys and compounds 2013-03, Vol.552, p.269-273
• Main Authors: Li, N., Li, W.L., Wang, L.D., Xu, D., Chi, Q.G., Fei, W.D.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Crystallization; Density; Deposition; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electric fields; Exact sciences and technology; Ferroelectricity and antiferroelectricity; Leakage; Leakage property; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Low temperature crystallization; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Seed layer; Seeds; Thin films; Vanadium pentoxide
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2012.10.072

► V2O5 as the seed layer. ► The seed layer for modifying the quality and the properties of the KNN-based films. ► The crystallization temperature was reduced to 425°C by seed layer adding. ► The leakage current density was greatly reduced by seed layer adding. K0.4Na0.6NbO3 (KNN) thin films were prepared by chemical solution deposition. The V2O5 seed layer was introduced to modify the quality and electric properties of the thin films. The results show that the V2O5 seed layer can reduce the crystallization temperature to 425°C and largely improve the leakage property of the KNN thin films. The KNN thin film with 5nm thickness V2O5 seed layer exhibits high ferroelectric and dielectric properties (2Prmax=26μC/cm2, ε=796, tanδ=0.04) and low leakage current density (4.0×10−5A/cm2) at the electric field of 350kV/cm at room temperature. By adding the V2O5 seed layer, the conduction mechanism changes from SCLC mechanism to Ohmic mechanism in the lower electric field (200kV/cm).