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Tailoring martensitic transformation and martensite structure of NiMnIn alloy by Ga doping In

► The crystal structures at room temperature for Ni50Mn34In16−xGax (x=0–16) alloys are studied. ► The mechanism for the martensitic transformation temperature variation with Ga content is analyzed. ► The Curie temperature for austenite and martensite are measured, showing different change tendency w...

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Bibliographic Details
Published in:Journal of alloys and compounds 2012-09, Vol.535, p.120-123
Main Authors: Liu, Z.H., Li, G.T., Wu, Z.G., Ma, X.Q., Liu, Y., Wu, G.H.
Format: Article
Language:English
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Summary:► The crystal structures at room temperature for Ni50Mn34In16−xGax (x=0–16) alloys are studied. ► The mechanism for the martensitic transformation temperature variation with Ga content is analyzed. ► The Curie temperature for austenite and martensite are measured, showing different change tendency with Ga content. The martensitic transformation and the martensite crystal structure of alloys Ni50Mn34In16−xGax (x=0, 2, 4, 6, 8, 10, 12, 14, 16) have been investigated in this study. The studied alloys, with cubic L21 phase (x=0, 2), seven-layered modulated (14M) martensite phase (x=4, 6, 8), and non-modulated (NM) martensite phase (x=10, 12, 14, 16), exhibit martensitic transformation with critical temperature increasing linearly from 238K for x=0 to 486K for x=16. The linearity coefficient is estimated to be ∼15K per at.% of Ga. With regards to the lattice parameters, a elongates, whereas b and c contract as the austenite phase transformed to 14M martensite phase. While, it turns to c elongates, a and b contract as austenite transformed to NM martensite phase. It is found that the unit cell volume decreases with increasing Ga content, which contributes to the increase of transformation temperature with Ga content. A maximum strain of 12% is predicted through the lattice distortion in 14M martensite. Magnetic measurement shows the Curie temperature for martensite increases with Ga content.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2012.04.088